| 自由电子激光对GaAs/AlGaAs异质结构材料电学性质的影响 |
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| 引用本文： | 张猛,林理彬,邹睿,张国庆,李永贵. 自由电子激光对GaAs/AlGaAs异质结构材料电学性质的影响[J]. 中国激光, 2003, 30(7): 593-596 |
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| 作者姓名： | 张猛 林理彬 邹睿 张国庆 李永贵 |
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| 作者单位： | 1. 四川大学物理系辐射物理及技术教育部重点实验室,四川,成都,610064
2. 中国科学院高能物理所自由电子激光研究室,北京,100080 |
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| 基金项目： | 国家自然科学基金(基金号:6008802)，全国高校博士点基金 |
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| 摘 要： | 自由电子激光(FEL)辐照样品前和辐照样品时,使用变温霍尔测量系统测试了这种n型调制掺杂GaAs/AlGaAs异质结构材料中准二维电子气(2DEG)的迁移率、电子浓度和电阻率。对比这两种情况下的结果可以发现:1)迁移率随温度升高而降低,光照使迁移率增大;2)电子浓度随温度变化关系相对较为复杂,但是平均而言,光照会使电子浓度减小;3)电阻率随温度升高而升高,光照使电阻率减小,但这种影响不明显。对这些现象给出了具体的分析。
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| 关 键 词： | 激光技术 电学性质 自由电子激光 异质结构材料 二维电子气 辐照效应 |
| 收稿时间： | 2002-04-04 |
Investigation of Electricity Property of GaAs/AlGaAs Heterostructure Material Influenced by FEL |
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| ZHANG Meng,LIN Li-bin,ZOU Rui,ZHANG Guo-qing,LI Yong-guiKey Laboratory for Radiation Physics and Technology of Ministry of Education,The Physics. Investigation of Electricity Property of GaAs/AlGaAs Heterostructure Material Influenced by FEL[J]. Chinese Journal of Lasers, 2003, 30(7): 593-596 |
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| Authors: | ZHANG Meng LIN Li-bin ZOU Rui ZHANG Guo-qing LI Yong-guiKey Laboratory for Radiation Physics Technology of Ministry of Education The Physics |
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| Affiliation: | ZHANG Meng,LIN Li-bin,ZOU Rui,ZHANG Guo-qing,LI Yong-guiKey Laboratory for Radiation Physics and Technology of Ministry of Education,The Physics Department of Sichuan University,Chengdu,Sichuan 610064,ChinaThe Lab of BFEL,Institute of High Energy Physics,The Chinese Academy of Science,Beijing 100080,China |
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| Abstract: | The Hall measurement equipment has been used to measure the mobility, the electron concentration and the resistivity of the 2DEG in the n-type modulation-doped GaAs/AlxGa1-xAs heterostruqture material before and during the sample being irradiated by FEL. Comparing the result of two cases, it is found that: 1) with enhancing temperature, the mobility decreases, and FEL makes the mobility increase; 2) the variety of the electron concentration with the temperature is more complex, but generally speaking, FEL makes electron concentration reduce; 3) with enhancing temperature, the resistivity increases, and FEL makes the resistivity decline, but the effect isn't obvious. These phenomena have all been analyzed in details. |
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| Keywords: | laser technique electricity property free-electron laser heterostructure material 2DEG irradiation effect |
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