Optimization of material structure of ploy-Si thin film based on Al induced crystallization |
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| Authors: | ZeWen Wang Bing Xiong LiChong Zhang Yi Luo |
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| Affiliation: | (1) Tsinghua National Laboratory for Information Science and Technology and State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China |
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| Abstract: | Based on Al induced crystallization (AIC) method, influences of different material structures on formation and characteristics
of ploy-silicon thin films were studied and optimized. Al-Si films on glass with different structures (Si/Al/Glass, Al/Si/Glass,
Si/Al/.../Si/Al/Glass) were deposited on glass substrates by sputtering method. All samples were annealed for MIC with varied
time processes under 500°C N2 environment. X-ray diffraction test and scanning electron microscope were adopted to characterize crystallization performance
and surface topography of AIC poly-silicon samples after removing residual aluminum. The electrical properties were also characterized
by Hall test method. Quick process and high performance of AIC ploy-silicon thin film can be both obtained by use of periodic
structure samples. |
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| Keywords: | Al induced crystallization poly-Si thin film material structure sputtering periodic structure |
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