Etude de la fiabilite d'un transistor a effet de champ As Ga pour hyperfrequences par des methodes d'analyse factorielle et de classification automatiqueReliability study of a microwave Ga As field-effect transistor,by means of factorial analysis and automatic classification methods

The device under investigation is a microwave Ga As field-effect transistor. It is intended for use on board a telecommunications satellite. The various parts involved are space qualified transistors, which have gone through various qualification tests at the manufacturer's.Statistical data analysis methods were used to process the results of measurements: main components analysis, automatic classification. The study of the burn-in behaviour was derived from qualification measurements. Additional tests were carried out on ten qualified devices. The results of these tests are also presented in this paper.