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Femtosecond bandedge excitations in modulation-doped quantum wells |
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| Authors: | Wayne H. Knox |
| Affiliation: | AT&T Bell Laboratories, Holmdel, NJ 07733, U.S.A. |
| Abstract: | Optical excitations near the bandedge of GaAs quantum wells have revealed interesting information about carrier scattering and renormalization. The extension of these studies to modulation-doped quantum wells is discussed. |
| Keywords: | Semiconductors quantum wells femtosecond nonlinear optics modulation doping renormalization |
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