The properties of annealed AlN films deposited by pulsed laser deposition |
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Authors: | K A Jones M A Derenge T S Zheleva K W Kirchner M H Ervin M C Wood R D Vispute R P Sharma T Venkatesan |
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Affiliation: | (1) U.S. Army Research Lab, 2800 Powder Mill Road, 20783 Adelphi, MD;(2) Physics Dept., University of Maryland, 20742 College Park, MD |
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Abstract: | AlN films deposited on SiC or sapphire substrates by pulsed laser deposition were annealed at 1200°C, 1400°C, and 1600°C for
30 min in an inert atmosphere to examine how their structure, surface morphology, and substrate-film interface are altered
during high temperature thermal processing. Shifts in the x-ray rocking curve peaks suggest that annealing increases the film
density or relaxes the films and reduces the c-axis Poisson compression. Scanning electron micrographs show that the AlN begins to noticeably evaporate at 1600°C, and the
evaporation rate is higher for the films grown on sapphire because the as-deposited film contained more pinholes. Rutherford
backscattering spectroscopy shows that the interface between the film and substrate improves with annealing temperature for
SiC substrates, but the interface quality for the 1600°C anneal is poorer than it is for the 1400°C anneal when the substrate
is sapphire. Transmission electron micrographs show that the as-deposited films on SiC contain many stacking faults, while
those annealed at 1600°C have a columnar structure with slightly misoriented grains. The as-deposited films on sapphire have
an incoherent interface, and voids are formed at the interface when the samples are annealed at 1600°C. Auger electron spectroscopy
shows that virtually no intermixing occurs across the interface, and that the annealed films contain less oxygen than the
as-grown films. |
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Keywords: | AlN anneal laser deposition spectroscopy |
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