| InP/InGaAs SHBT器件自对准结构设计和工艺实现 |
| |
| 引用本文： | 李献杰,蔡道民,赵永林,王全树,周州,曾庆明.InP/InGaAs SHBT器件自对准结构设计和工艺实现[J].半导体学报,2005,26(13):136-139. |
| |
| 作者姓名： | 李献杰 蔡道民 赵永林 王全树 周州 曾庆明 |
| |
| 作者单位： | 中国电子科技集团公司第13研究所，石家庄 050051;中国电子科技集团公司第13研究所，石家庄 050051;中国电子科技集团公司第13研究所，石家庄 050051;中国电子科技集团公司第13研究所，石家庄 050051;中国电子科技集团公司第13研究所，石家庄 050051;中国电子科技集团公司第13研究所，石家庄 050051 |
| |
| 摘 要： | 从InP湿法腐蚀各向异性特性实验出发，利用传统的基极-发射极自对准工艺和改进的基极-发射极工艺制作了两种InP/InGaAs SHBT自对准结构，比较了两种自对准工艺对减小基极与发射极台面间距的效果，为制作高频率特性InP/InGaAs SHBT提供了工艺途径.
|
| 关 键 词： | InP SHBT 自对准工艺 湿法腐蚀 |
Design and Process for Self-Aligned InP/InGaAs SHBT Structure |
| |
| Li Xianjie,Cai Daomin,Zhao Yonglin,Wang Quanshu,Zhou Zhou and Zeng Qingming.Design and Process for Self-Aligned InP/InGaAs SHBT Structure[J].Chinese Journal of Semiconductors,2005,26(13):136-139. |
| |
| Authors: | Li Xianjie Cai Daomin Zhao Yonglin Wang Quanshu Zhou Zhou and Zeng Qingming |
| |
| Affiliation: | 13th Institute of CETC,Shijiazhuang 050051,China;13th Institute of CETC,Shijiazhuang 050051,China;13th Institute of CETC,Shijiazhuang 050051,China;13th Institute of CETC,Shijiazhuang 050051,China;13th Institute of CETC,Shijiazhuang 050051,China;13th Institute of CETC,Shijiazhuang 050051,China |
| |
| Abstract: | A traditional base-emitter contact self-aligned structure as well as an improved one is designed and processed for InP/InGaAs SHBT based on wet chemical anisotropy etching experiment of InP.The effect of shorting the gap between the base contact and the emitter mesa for the two structures is compared,which provides the effective method for high frequency devices. |
| |
| Keywords: | InP SHBT self-align structure wet etching |
|
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
