Novel design of AlGaInAs-InP lasers operating at 1.3 μm

A novel design of AlGaInAs-InP lasers operating at 1.3 μm is proposed. A distinctive attribute of the proposed design is that the AlInGaAs active region is surrounded by an AlInAs electron stopper layer on the p-side and an InP hole stopper layer on the n-side. The stopper layers do not impede the carrier injection into the active region and at the same time reduce the thermionic emission of carriers out of the active region. Utilization of stopper layers allows one to increase the value of internal quantum efficiency and to select the waveguide material corresponding to the optimum optical confinement factor value