Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR |
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| Authors: | Niu Jin Sung-Yong Chung Heyns R.M. Berger P.R. Ronghua Yu Thompson P.E. Rommel S.L. |
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| Affiliation: | Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA; |
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| Abstract: | A vertically integrated npnp Si-based resonant interband tunneling diode (RITD) pair is realized with low-temperature molecular beam epitaxy by stacking two RITDs with a connecting backward diode between them. The current-voltage characteristics of the vertically integrated RITD pair demonstrates two sequential negative differential resistance regions in the forward-biasing condition. Tri-state logic is demonstrated by using the vertically integrated RITDs as the drive and an off-chip resistor as the load. |
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