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Pulsed laser deposition of indium tin oxide nanowires in argon and helium
Authors:Thian-Khok YongSek-Sean Tan,Chen-Hon NeeSeong-Shan Yap,Yeh-Yee KeeGyö  rgy Sá  frá  n,Zsolt Endre Horvá  thJason Moscatello,Yoke-Khin YapTeck-Yong Tou
Affiliation:
  • a Faculty of Engineering, Multimedia University, Cyberjaya, Selangor, Malaysia
  • b Research Institute for Technical Physics and Material Science, Hungarian Academy of Sciences (MFA), Budapest, Hungary
  • c Department of Physics, Michigan Technological University, 1400 Townsend Drive, Houghton, MI 49931-1295, USA
  • Abstract:
    Nanowires of indium tin oxide (ITO) were grown on catalyst-free amorphous glass substrates at relatively low temperature of 250 °C in argon and helium ambient by the Nd:YAG pulsed laser deposition technique. All the ITO samples showed crystalline structure due to substrate heating and the (400) X-ray diffraction peak became relatively stronger as the pressure was increased. The surface morphology was also changed from compact, polycrystalline thin-film layers to a dendritic layer consisting of nanowires for some limited pressure ranges. The transition from the normal thin-film structure to nanowires was likely due to the vapor-liquid-solid mechanism but under catalyst-free condition. These nanowires tended to grow perpendicularly on the glass substrate, as observed with the transmission electron microscopy (TEM), which also confirmed that these nanowires were crystalline.
    Keywords:Thin films   Laser processing   Electronic materials
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