Pulsed laser deposition of indium tin oxide nanowires in argon and helium |
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Authors: | Thian-Khok YongSek-Sean Tan,Chen-Hon NeeSeong-Shan Yap,Yeh-Yee KeeGyö rgy Sá frá n,Zsolt Endre Horvá thJason Moscatello,Yoke-Khin YapTeck-Yong Tou |
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Affiliation: | a Faculty of Engineering, Multimedia University, Cyberjaya, Selangor, Malaysiab Research Institute for Technical Physics and Material Science, Hungarian Academy of Sciences (MFA), Budapest, Hungaryc Department of Physics, Michigan Technological University, 1400 Townsend Drive, Houghton, MI 49931-1295, USA |
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Abstract: | Nanowires of indium tin oxide (ITO) were grown on catalyst-free amorphous glass substrates at relatively low temperature of 250 °C in argon and helium ambient by the Nd:YAG pulsed laser deposition technique. All the ITO samples showed crystalline structure due to substrate heating and the (400) X-ray diffraction peak became relatively stronger as the pressure was increased. The surface morphology was also changed from compact, polycrystalline thin-film layers to a dendritic layer consisting of nanowires for some limited pressure ranges. The transition from the normal thin-film structure to nanowires was likely due to the vapor-liquid-solid mechanism but under catalyst-free condition. These nanowires tended to grow perpendicularly on the glass substrate, as observed with the transmission electron microscopy (TEM), which also confirmed that these nanowires were crystalline. |
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Keywords: | Thin films Laser processing Electronic materials |
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