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Electrical and optical properties of ZnO:Mn thin films grown by MOCVD |
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| Authors: | E. Chikoidze Y. Dumont O. Gorochov |
| Affiliation: | a Groupe d'Etudes de la Matière Condensée, CNRS-Université de Versailles Saint Quentin en Yvelines, 1 Pl. Aristide Briand, 92195 Meudon Cedex, France b Material Science Department, Tbilisi State University, 3, Chavchavdze Ave.2801, Tbilisi, Georgia |
| Abstract: | Diluted magnetic semiconductor epitaxial thin films of Zn1 − xMnxO have been grown on c-sapphire by the MOCVD technique. Variations of a and c lattice parameters follow Vegard's law and attest to the incorporation of substitutional Mn2+ ions. Carrier concentration (n-type) and electron mobility were studied versus temperature for different concentrations of manganese. Incorporation of manganese leads to the opening of the band gap, observed as a blue shift in energy regarding pure ZnO. |
| Keywords: | ZnO Magnetic semiconductors MOCVD Transport properties Optical transmittance |
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