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The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy |
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| Authors: | A. A. Tonkikh G. E. Cirlin N. K. Polyakov Yu. B. Samsonenko V. M. Ustinov N. D. Zakharov P. Werner V. G. Talalaev B. V. Novikov |
| Affiliation: | (1) Institute for Analytical Instrumentation, Russian Academy of Sciences, Rizhskiĭ pr. 26, St. Petersburg, 190103, Russia;(2) St. Petersburg Physicotechnical Scientific and Educational Center, Russian Academy of Science, St. Petersburg, 195220, Russia;(3) Max-Planck Institute of Microstructure Physics, 06120 Halle (Saale), Germany;(4) Fok Institute of Physics, St. Petersburg State University, Ulyanovskaya 1, St. Petersburg-Petrodvorets, 198504, Russia |
| Abstract: | The structural and optical properties of arrays of InAs quantum dots grown on GaAs substrates at relatively low temperatures (250 and 350°C) and with various degrees of misorientation of the surface are studied. It is shown that low-temperature growth is accompanied by the formation of quantum dot clusters along the dislocation loops on the singular surface and along the steps caused by the surface vicinality on the misoriented surface. The formation of quantum dot clusters leads to the appearance of a new long-wavelength band in the exciton photoluminescence (PL) spectra. It is found that the degrees of polarization of the PL spectral band for clusters of various shapes are different. |
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