| 一种应用于IEEE 802.11 a_n的高线性度InGaP/GaAs功率放大器 |
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| 引用本文： | 崔杰,陈磊,康春雷,史佳,张旭光,艾宝丽,刘轶. 一种应用于IEEE 802.11 a_n的高线性度InGaP/GaAs功率放大器[J]. 半导体学报, 2013, 34(6): 065001-6 |
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| 作者姓名： | 崔杰 陈磊 康春雷 史佳 张旭光 艾宝丽 刘轶 |
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| 作者单位： | Micro-Nano Device Research Center,Shanghai Advanced Research Institute,Chinese Academy of Sciences;Graduate University of the Chinese Academy of Sciences |
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| 基金项目： | 上海市“创新行动计划”院市合作项目（No.Y132541D01）;国家自然科学基金（No.61201244) |
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| 摘 要： | A three-stage 4.8-6 GHz monolithic power amplifier(PA) compatible with IEEE 802.11a/n designed based on an advanced 2μm InGaP/GaAs hetero-junction bipolar transistor(HBT) process is presented.The PA integrates input matching and closed-loop power control circuits on chip.Under 3.3 V DC bias,the amplifier achieves a ~31 dB small signal gain,excellent wide band input and output matching among overall 1.2 GHz bandwidth,and up to 24.5 dBm linear output power below EVM 3%with IEEE 802.11a 64QAM OFDM input signal.
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| 关 键 词： | error vector magnitude(EVM) high power amplifier(HPA) high linearity InGaP/GaAs HBT wideband |
A high-linearity InGaP/GaAs HBT power amplifier for IEEE 802.11a/n |
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| Cui Jie,Chen Lei,Kang Chunlei,Shi Ji,Zhang Xuguang,Ai Baoli and Liu Yi. A high-linearity InGaP/GaAs HBT power amplifier for IEEE 802.11a/n[J]. Chinese Journal of Semiconductors, 2013, 34(6): 065001-6 |
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| Authors: | Cui Jie Chen Lei Kang Chunlei Shi Ji Zhang Xuguang Ai Baoli Liu Yi |
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| Affiliation: | Micro-Nano Device Research Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;Micro-Nano Device Research Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China;Micro-Nano Device Research Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China;Micro-Nano Device Research Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China;Micro-Nano Device Research Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China;Micro-Nano Device Research Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China;Micro-Nano Device Research Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China |
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| Abstract: | |
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| Keywords: | error vector magnitude (EVM) high power amplifier (HPA) high linearity InGaP/GaAs HBT wideband |
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