Chemical Etching of CdTe in Aqueous Solutions
of H2O2-HI-Citric Acid |
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| Authors: | V. G. Ivanits’ka P. Moravec J. Franc Z. F. Tomashik P. I. Feychuk V. M. Tomashik L. P. Shcherbak K. Mašek P. Höschl |
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| Affiliation: | (1) Chernivtsi National University, Chernivtsi, Ukraine;(2) Faculty of Mathematics and Physics, Institute of Physics, Charles University, Ke Karlovu 5, Prague 2, CZ-121 16, Czech Republic;(3) Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine;(4) Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University, Ke Karlovu 5, Prague 2, CZ-121 16, Czech Republic |
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| Abstract: | An iodine-based etching system, H2O2-HI-citric acid, has been developed and tested on CdTe samples with orientations (111)A, (111)B, (110), and (100). The etching
velocity of CdTe was shown to depend on sample orientation and other etching conditions. The surface roughness was comparable
with that of the surfaces after Br-methanol treatment. A comparative study of the chemical composition of the (211)B CdZnTe
surfaces etched under different conditions was performed. X-ray photoelectron spectroscopy (XPS) measurements showed that
all treated surfaces of CdZnTe samples are enriched with Te. The HI-based treatment seems to be more acceptable than the Br-methanol
treatment in terms of elimination of Te oxides from the surface, however. |
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| Keywords: | CdTe CdZnTe chemical etching XPS |
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