Demonstration of 184 and 255-GHz Amplifiers Using InP HBT Technology |
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| Authors: | Fung A. Samoska L. Gaier T. Radisic V. Sawdai D. Scott D. Deal W.R. Linh Dang Li D. Cavus A. To R. Lai R. |
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| Affiliation: | California Inst. of Technol., Pasadena; |
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| Abstract: | ![]()
In this letter, 184 and 255 GHz single-stage heterojunction bipolar transistor (HBT) amplifiers are reported. Each amplifier uses a single-emitter 0.4 mum 15 mum InP HBT device with maximum frequency of oscillation (fmax) greater than 500 GHz and of 200 GHz. The 183 GHz single-stage amplifier has demonstrated gain of 4.3 plusmn 0.4 dB for all sites on the wafer. The 255 GHz amplifier has measured gain of 3.5d B and demonstrates the highest frequency measured HBT amplifier gain reported to date. Both amplifiers show excellent agreement with original simulation. |
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