单边接地MESFET及其寄生效应的分析模型

本文介绍了栅宽为150μm和240μm两种单边接地MESFET制造工艺及其在单片电路中的应用。这种器件结构可减小器件占用的GaAs芯片面积,提高电路布线的灵活性,并已应用于12GHz低噪声放大器GaAs单片电路,取得了良好效果。本文也给出了这种器件寄生效应的分析模型,并计算讨论了栅靶、空气桥以及接地块等寄生元件对器件的散射参数和噪声参数的影响。

Single-Side Grounding MESFET and Its Analytic Model on Parasitic Effects

This paper describes the fabrication technology for single-side grounding MESFET with gate width of 150μm or 240μm, and its application in MMIC. This kind of device structure, with which a GaAs monolithic integrated 12GHz low noise amplifier has reached a good performance, is beneficial to the reduction of the device area and the convenience of the circuit layout. This paper has also developed the analytic model of the parasitic effects for this structure, and calculated and discussed the effects introduced by parasitic elements, such as gate-pads, air-bridges and grounding-pads, on the device scattering and noise parameters.