| 难熔金属及硅化物薄膜特性研究 |
| |
| 引用本文： | 胡延年. 难熔金属及硅化物薄膜特性研究[J]. 微纳电子技术, 1998, 0(1) |
| |
| 作者姓名： | 胡延年 |
| |
| 作者单位： | 辽宁大学电子科学与工程系 |
| |
| 摘 要： | 对难熔金属及其硅化物的形成、特性进行了研究。采用溅射难熔金属、热硅化反应的方法，解决了ＶＬＳＩ工艺中由于ＭＯＳ电路图形尺寸缩小带来的栅电阻增大的问题；采用硅化物阻挡层和Ａ１多层金属布线方法，解决了欧姆接触和铝的电迁移问题。
|
| 关 键 词： | 磁控溅射，难熔金属，硅化物 |
Technology Study on Properties of Refractory Metals and Silicide Film Preparation |
| |
| HU Yannian. Technology Study on Properties of Refractory Metals and Silicide Film Preparation[J]. Micronanoelectronic Technology, 1998, 0(1) |
| |
| Authors: | HU Yannian |
| |
| Abstract: | In this paper , we studied the formation and properties of refractory metal sili- cide. By the means of sputtering refractory metals and heat silicification reaction , the question that grid resistor increase during decreasing the graph dimension of MOS cir- cuit is resolved. And by the means of silicide , resist layer and aluminium multilayer metal lines , the questions of ohmic-contact and A1 electron mobility are resolved. |
| |
| Keywords: | Magnetically-controlled sputtering Refractory metal Silicide . |
| 本文献已被 CNKI 等数据库收录！ |
