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Polarization-insensitive superluminescent diode at 1.5 μm with atensile-strained-barrier MQW |
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| Authors: | Mikami O. Noguchi Y. Magari K. Suzuku Y. |
| Affiliation: | Tokyo Univ.; |
| Abstract: | Polarization-insensitive high-power superluminescent diodes emitting at 1.5-μm were fabricated by using a tensile-strained-barrier MQW. Polarization difference as low as 5% and 3.8 mW optical power were obtained at 200 mA injection current |
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