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High growth rate process in a SiC horizontal CVD reactor using HCl |
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| Authors: | F La Via G Galvagno F Giannazzo A Ruggiero L Calcagno M Mauceri G Pistone G Abbondanza A Veneroni L Zamolo GL Valente |
| Affiliation: | a CNR-IMM sezione di Catania, Stradale Primosole 50, 95121 Catania, Italy b LPE,Via Falzarego 8, 20021 Bollate (MJ), Italy c Physics Department, Catania University, Via S. Sofia 64, 95123 Catania, Italy d Epitaxial Technology Center, c/o BIC Sicilia - Pantano d’Arci, 95030 Catania, Italy e STM, Stradale Primosole 50, 95121 Catania, Italy f Dipartimento di Chimica, Materiali e Ingegneria Chimica “G. Natta”, Politecnico di Milano, Milano, Italy |
| Abstract: | The results of a new epitaxial process using an industrial 6 × 2″ wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H2 > 0.05%) and an increase of the growth rate until about 20 μm/h has been measured. Photoluminescence at room temperature and at 50 K was used for defects quantification and distribution. On these wafers grown using HCl high voltage Schottky diodes have been realized. The diodes were analyzed by current-voltage (I-V) characteristics. |
| Keywords: | CVD Epitaxy HCl Growth rate |
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