IC缺陷轮廓分形维估计的小波方法

为了有效的进行集成电路成品率预报和故障分析,与光刻有关的硅片表面缺陷通常被假定为圆形、椭圆或方形.然而,真实缺陷的形貌是多种多样的,它们的形状对集成电路的成品率估计有重要影响.本文讨论了缺陷轮廓所具有的分形特征,并用小波变换的方法对其分形维数进行了估计,估计结果与实例的特征相符,从而为缺陷轮廓的表征和计算机模拟提供了新的特征参数.

Estimating the Fractal Dimension of IC Defect Outline by Wavelet

For efficient yield prediction and inductive fault analysis of integrated circuits, it is usually assumed that defects related to the photolithographic in the wafer surface have the shape of circular discs, ellipse or squares. Real defects, however, exhibit a great variety of different shapes,their shapes usually play an extremely important role in the yield prediction. The fractal characterizations of real defect outlines are discussed, and the fractal dimension is estimated by wavelet transform,the result is in agree with the actual feature. So it provides new feature parameters for the characterization and computer simulation of defect outline.