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High-efficiency quasimicrowave GaAs FET power amplifier |
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| Authors: | Nojima T Nishiki S Chiba K |
| Affiliation: | NTT Electrical Communications Laboratories, Yokosuka, Japan; |
| Abstract: | A 1.7 GHz-based class-F GaAs FET amplifier is proposed. To achieve high-efficiency performance, a precisely adjustable terminating circuit constructed with lumped elements is introduced. Power-added efficiency of 68% at 1.5 W output is attained with the amplifier. |
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