| 一种新型偏置栅MOS管漂移区表面电压和电场的分析模型 |
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| 引用本文： | 孙伟锋,吴建辉,陆生礼,时龙兴. 一种新型偏置栅MOS管漂移区表面电压和电场的分析模型[J]. 电子器件, 2002, 25(3): 292-295 |
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| 作者姓名： | 孙伟锋 吴建辉 陆生礼 时龙兴 |
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| 作者单位： | 东南大学国家ASIC系统工程中心,南京,210096;东南大学国家ASIC系统工程中心,南京,210096;东南大学国家ASIC系统工程中心,南京,210096;东南大学国家ASIC系统工程中心,南京,210096 |
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| 摘 要： | 本文提出了偏置栅MOS管漂移区离子注入剂量对表面电压和PN结边界电场两者关系的一种新的分析模型,借助数学推导得到该模型的计算方程,通过仿真曲线图能清楚地看到它们之间的变化关系,同时说明提高偏置栅MOS管击穿电压的方法。
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| 关 键 词： | 偏置栅MOS 漂移区 表面电压 PN结边界电场 |
| 文章编号： | 1005-9490(2002)03-0292-04 |
| 修稿时间： | 2002-03-11 |
A Novel Analytic Model on Surface Voltage and ElectricField of the Drift of Offset2Gate MOS |
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| SUN Weifeng,WU Jianhui,LU Shengli,SHI Longxing. A Novel Analytic Model on Surface Voltage and ElectricField of the Drift of Offset2Gate MOS[J]. Journal of Electron Devices, 2002, 25(3): 292-295 |
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| Authors: | SUN Weifeng WU Jianhui LU Shengli SHI Longxing |
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| Affiliation: | Southeast University |
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| Abstract: | A novel analytic model on the relationship about the surface voltage and the PN junction electric field with the ion dose in the drift of gate off MOS is presented. The equations are gained by mathematics process. The variety on them can be distinctly seen from the graphs. Some ways to improve breakdown voltage are also discussed. |
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| Keywords: | offset gate MOS drift surface voltage PN junction electric field |
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