Structural, optical and electrical properties of high-k ZrO2 dielectrics on Si prepared by plasma assisted pulsed laser deposition |
| |
Authors: | W ZhangY Cui ZG HuWL Yu J SunN Xu ZF YingJD Wu |
| |
Affiliation: | a Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Department of Optical Science and Engineering, Fudan University, Shanghai 200433, People's Republic of Chinab Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, People's Republic of China |
| |
Abstract: | ZrO2 films were grown on p-type Si(100) using plasma assisted pulsed laser deposition and the electrical characteristics of the ZrO2 dielectrics incorporated in metal oxide silicon (MOS) capacitors were studied in combination with their structural and optical properties. The ZrO2 dielectric layers are of polycrystalline structure with a monoclinic phase and show good interfacial properties without obvious SiOx interface. The electrical performance of the capacitors exhibits typical MOS-type capacitance-voltage (C-V) and leakage current density-voltage (J-V) characteristics. Thermal annealing of the ZrO2 dielectrics results in an improvement in C-V and J-V characteristics and a reduction in C-V hysteresis without obvious introduction of leakage paths for the fabricated MOS capacitors. The dielectric constant was calculated to be 15.4 and the leakage current density was measured to be 6.7 × 10− 6 A/cm2 at a gate voltage of + 1.0 V for 900 °C annealed ZrO2 dielectric layers with an equivalent oxide thickness of 5.2 nm. |
| |
Keywords: | Zirconia Dielectric property Annealing Optical property Structural property Interfacial property Plasma assisted pulsed laser deposition |
本文献已被 ScienceDirect 等数据库收录! |