一种3D垂直结构的光电探测器研制

提出了一种3D垂直结构光电探测器及制作方法.将光电探测器芯片的下电极焊接在基板上,上电极通过金丝连接到放大电路,使得光通过侧面进入本征工层,有效解决了重掺杂死区和金属电极的阻光问题,降低了光损失,减少了复合率,提高了响应度.结在半导体体内,减小了暗电流(表面漏电流),提高了反向击穿电压.结面积的主要部分为平行平面结,有...

Research and Manufacture of a 3D Vertical Structure Photodetector

A 3D vertical structure photodetector and its manufacturing method were presented. The lower electrode of the photoelectric detector chip was welded to the substrate, and the upper electrode was connected to the amplifying circuit through the gold wire, so that the light could entere into the intrinsic layer through the side, which effectively solved the problem of heavy doping dead zone and metal electrode blocking light, reduced the light loss, reduced the composite rate, and improved the response degree. The structure of the junction in the semiconductor reduced the surface leakage current and increased the reverse breakdown voltage. The main part of the junction area was the parallel plane junction area, which effectively reduced the total junction capacitance area, reduced the parasitic time constant, and improved the response speed.