| nc-Ge/Si岛基光子晶体单点缺陷腔的数值模拟与分析 |
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| 引用本文： | 唐海侠,王启明.nc-Ge/Si岛基光子晶体单点缺陷腔的数值模拟与分析[J].半导体学报,2006,27(12):2139-2143. |
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| 作者姓名： | 唐海侠 王启明 |
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| 作者单位： | 中国科学院半导体研究所，北京 100083);中国科学院半导体研究所，北京 100083) |
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| 摘 要： | 阐述了利用光子晶体单点缺陷微腔来提高Ge/Si纳米岛发光效率的机理.通过3D FDTD方法计算出在平板厚度为300nm时,谐振波长随a和r/a变化的规律,即当给定r/a,h时,波长随晶格常数成次线性增加;当给定a,h时,波长随r/a的增加而减小.并从理论上给予分析.
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| 关 键 词： | 光子晶体 单缺陷腔 nc-Ge/Si岛 光子晶体 点缺陷 数值 模拟与分析 Based Cavity Photonic Crystal Analysis Theoretical Simulation 理论 次线性 晶格常数 谐振波长 规律 变化 厚度 平板 计算 方法 |
| 文章编号： | 0253-4177(2006)12-2139-05 |
| 收稿时间： | 05 18 2006 12:00AM |
| 修稿时间： | 08 11 2006 12:00AM |
Numerical Simulation and Theoretical Analysis of Photonic Crystal Single-Defect Cavity Based on nc-Ge/Si Islands |
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| Tang Haixia and Wang Qiming.Numerical Simulation and Theoretical Analysis of Photonic Crystal Single-Defect Cavity Based on nc-Ge/Si Islands[J].Chinese Journal of Semiconductors,2006,27(12):2139-2143. |
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| Authors: | Tang Haixia and Wang Qiming |
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| Affiliation: | Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | The principle of the enhancement of nc-Ge/Si islands by a photonic crystal single-defect cavity is explained. For a photonic crystal slab with a thickness of 300nm,the resonant wavelength of a photonic crystal single-defect cavity based on Ge/Si islands as a function of a and r/a is calculated with the 3D FDTD method and is analyzed theoretically. For fixed r/a and h ,the wavelength increases sub-linearly with the increase of lattice constant. For fixed a and h ,the wavelength decreases linearly with the increase of r/a. |
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| Keywords: | photonic crystal single-defect cavity nc-Ge/Si islands |
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