| 磁控溅射制备Ti-Zn-O复合薄膜及其光学性质研究 |
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| 引用本文： | 朱明海,陈广彬,冯禹,龚楠,汪剑波.磁控溅射制备Ti-Zn-O复合薄膜及其光学性质研究[J].长春理工大学学报,2014(1):48-51. |
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| 作者姓名： | 朱明海 陈广彬 冯禹 龚楠 汪剑波 |
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| 作者单位： | 长春理工大学 理学院,长春130022 |
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| 基金项目： | 吉林省环保厅科技项目（2011-32）,吉林省教育厅应用基础研究（2013-378） |
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| 摘 要： | TiO2是作为一种宽禁带半导体材料可作为紫外器件，但因其间接带隙结构、禁带宽度仅为3.0eV等特点，严重影响其应用范围。本文利用共溅射技术，通过Zn掺杂，在K9玻璃基底上制备了Ti-Zn-O复合薄膜，并研究了Zn溅射功率对其结构及光学性质的影响。结果显示：所制备的薄膜为ZnTiO3和不饱和TiO2的复合结构，随着Zn粒子的溅射能量增加，晶粒尺寸和表面粗糙度增加，并可将薄膜本征吸收边蓝移至3.61eV。
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| 关 键 词： | 磁控溅射 掺杂 复合薄膜 禁带宽度 |
Research on Magnetron Sputtering of Ti-Zn-O Composite Thin Films and Its Optical Property |
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| ZHU Minghai,CHEN Guangbin,FENG Yu,GONG Nan,WANG Jianbo.Research on Magnetron Sputtering of Ti-Zn-O Composite Thin Films and Its Optical Property[J].Journal of Changchun University of Science and Technology,2014(1):48-51. |
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| Authors: | ZHU Minghai CHEN Guangbin FENG Yu GONG Nan WANG Jianbo |
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| Affiliation: | (School of Science, Changchun University of Science and Technology, Changehun 130022) |
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| Abstract: | TiO2 can be used as UV device because it is a wide band gap semiconductor material,however,because of the indirect band gap structure;the band gap is only 3.0eV, etc., seriously affecting its scope of application. In this paper, Ti-Zn-O composite film was prepared on K9 glass substrate by sputtering technique, and the effects of Zn sputtering power of its structure and optical properties were researched. The results showed that the prepared films were ZnTiO3 and unsaturated TiO2 composite structure, with the increase of Zn sputtering energy, the crystallite size and the surface roughness were both increased,and the intrinsic absorption edge of the films was blue shifted to 3.61eV. |
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| Keywords: | magnetron sputtering doping composite film band gap |
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