Visible (660 nm) resonant cavity light-emitting diodes |
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| Authors: | Lott JA Schneider RP Jr Vawter GA Zolper JC Malloy KJ |
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| Affiliation: | Sandia Nat. Labs., Albuquerque, NM, USA; |
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| Abstract: | The demonstration of the first visible resonant cavity light-emitting diodes (RCLEDs) is reported. The devices consist of an InAlGaP strained quantum well active region surrounded by AlAs/AlGaAs distributed Bragg reflectors. Linewidths from 0.9 mm (2.6 meV) to 45 nm (12.8 meV) were obtained by varying the cavity factor (Q).<> |
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