| 化学气相沉积制备大面积高质量石墨烯的研究进展 |
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| 引用本文： | 石晓东,王伟,尹强,李春静.化学气相沉积制备大面积高质量石墨烯的研究进展[J].材料导报,2017,31(3):136-142. |
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| 作者姓名： | 石晓东 王伟 尹强 李春静 |
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| 作者单位： | 河北工业大学电子信息工程学院，天津市电子材料与器件重点实验室，天津 300401 |
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| 基金项目： | 河北省在读研究生创新资助项目(220056)；河北省自然科学基金(F2012202075) |
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| 摘 要： | 石墨烯是由单层碳原子紧密堆积形成的一种碳质新材料,具有优良的电学、光学、热学及力学等性质。在众多的石墨烯制备方法中,化学气相沉积(Chemical vapor deposition,CVD)最有可能实现大面积、高质量石墨烯的可控制备。综述了CVD方法制备大面积、高质量石墨烯的影响因素,包括衬底、碳源及生长条件(气体流量、生长温度、等离子体功率、生长压强、沉积时间、冷却速率等)。最后展望了CVD方法制备石墨烯的发展方向。
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| 关 键 词： | 石墨烯 化学气相沉积 衬底 碳源 生长条件 |
Research Progress of Large-area and High-quality Graphene Prepared by Chemical Vapor Deposition |
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| SHI Xiaodong,WANG Wei,YIN Qiang and LI Chunjing.Research Progress of Large-area and High-quality Graphene Prepared by Chemical Vapor Deposition[J].Materials Review,2017,31(3):136-142. |
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| Authors: | SHI Xiaodong WANG Wei YIN Qiang and LI Chunjing |
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| Affiliation: | Tianjin Key Laboratory of Electronic Materials and Device, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401,Tianjin Key Laboratory of Electronic Materials and Device, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401,Tianjin Key Laboratory of Electronic Materials and Device, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401 and Tianjin Key Laboratory of Electronic Materials and Device, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401 |
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| Abstract: | Graphene, as a new kind of carbonaceous materials, is formed by the close accumulation of a single layer of carbon atoms. It has many unique properties such as electricity, photology, thermology and mechanics. Among all the methods for preparation of graphene, chemical vapor deposition (CVD) is the most likely to achieve controllable preparation of a large-area and high-qua-lity graphene. In this paper, we mainly overview the influence factors of large-area and high-quality graphene prepared by CVD, including substrate, carbon source and growth conditions (gas flow rate, growth temperature, plasma power, growth pressure, deposition time, cooling rate, etc). Finally, the development direction of the preparation of graphene by CVD method is proposed. |
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| Keywords: | graphene chemical vapor deposition substrate carbon source growth conditions |
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