High-efficiency 3.4–4.4 μm light-emitting diodes based on a p-AlGaAsSb/n-InGaAsSb/n-AlGaAsSb heterostructure operating at room temperature |
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Authors: | B Zhurtanov É V Ivanov A N Imenkov N M Kolchanova A E Rozov N Stoyanov Yu P Yakovlev |
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Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia |
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Abstract: | Light-emitting diode structures operating at room temperature were obtained based on a p-AlGaAsSb/n-InGaAsSb/n-AlGaAsSb heterostructure with high Al content in the boundary layers formed on a p-GaSb(100) substrate. This structure ensures a threefold increase in the output radiant power and the external quantum yield (~1%) as compared to the known InAsSb/InAsSbP heterostructure grown on an InAs substrate. A considerable increase in the pulsed output radiant power is explained by a more effective confinement of nonequilibrium charge carriers in the active region and by a decrease in the nonradiative recombination level, which is achieved by creating an isoperiodic structure. |
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