| 非有意掺杂LEC SI GaAs中EL2分布特性的研究 |
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| 引用本文： | 杨瑞霞,付濬,李光平.非有意掺杂LEC SI GaAs中EL2分布特性的研究[J].电子与信息学报,1995,17(1):92-97. |
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| 作者姓名： | 杨瑞霞 付濬 李光平 |
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| 作者单位： | 河北工学院电子工程系，河北工学院电子工程系，天津电子材料研究所 天津 300130，天津 300130，天津 300192 |
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| 摘 要： | 测量比较了不同条件下热处理后非有意掺杂半绝缘(SI)LEC GaAs中EL2浓度及其分布的变化,为了分析这一变化,还检测了位错和As沉淀的分布。在实验结果基础上,对EL2分布不均匀性的起源和热处理改善EL2分布均匀性的机理进行了讨论。
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| 关 键 词： | EL2 位错 AS沉淀 浓度分布 |
| 收稿时间： | 1993-7-11 |
| 修稿时间： | 1994-1-17 |
STUDY ON DISTRIBUTION CHARACTERISTICS OF EL2 IN UNDOPED LEC SI GaAs |
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| Yang Ruixia,Fu Jun,Li Guangping.STUDY ON DISTRIBUTION CHARACTERISTICS OF EL2 IN UNDOPED LEC SI GaAs[J].Journal of Electronics & Information Technology,1995,17(1):92-97. |
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| Authors: | Yang Ruixia Fu Jun Li Guangping |
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| Affiliation: | Hebei Institute of Technology, Tianjin 300130;Tianjin Electronic Materials Research Institute, Tianjin 300192 |
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| Abstract: | The changes in the concentration and distribution of EL2 in undoped LEC SI GaAs caused by various annealing conditions were measured. The distribution of dislocation and precipitation of As were also measured for analyzing these changes. The origin of the inhomogeneity of EL2 distribution and the mechanism which improves the homogeneity of EL2 distribution by annealing are discussed on the basis of the experimental results. |
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| Keywords: | EL2 Dislocation Precipitation of As GaAs concentration distribution |
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