Effects of hydrogen plasma on passivation and generation of defects in multicrystalline silicon |
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Authors: | S Darwiche M Nikravech D Morvan J Amouroux D Ballutaud |
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Affiliation: | aLaboratoire de Génie des Procédés Plasma et Traitement de Surface, Université Pierre et Marie Curie, ENSCP 11 rue Pierre et Marie Curie, 75005 Paris, France;bLaboratoire de Physique des Solides et Cristallogenèse, 1 place Aristide Briand, 92195 Meudon, France |
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Abstract: | Hydrogenation by plasma is a low cost and efficient method to improve the photovoltaic properties of multicrystalline silicon. The role of plasma parameters on the efficiency of hydrogenation was studied using secondary ion mass spectrometry (SIMS), hydrogen effusion, electrochemical impedance spectroscopy and electron beam induced current (EBIC). The experimental results showed a deuterium concentration of 1020 atoms cm−3 could be reached in the sample after a 15-min treatment. Optimal treatment time depends on temperature and leads to maximum electrical conductivity and minority carrier diffusion length. The results confirm the reduction of defects densities and potential barriers associated with grain boundaries. |
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Keywords: | Multicrystalline silicon Hydrogen SIMS Minority carrier diffusion length Electrochemical impedance spectroscopy |
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