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Carbon Nanotube Radio-Frequency Single-Electron Transistor |
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| Authors: | Leif Roschier Mika Sillanpää Wang Taihong Markus Ahlskog Sumio Iijima Pertti Hakonen |
| Affiliation: | 1. Helsinki University of Technology, Low Temperature Laboratory, P.O.BOX 2200, FIN-02015 HUT, Finland 2. Institute of Physics, Chinese Academy of Sciences, P.O.BOX 603, Beijing, 100080, China 3. Department of Physics, University of Jyv?skyl?, P.O.BOX 35, FIN-40014 YFL, Finland 4. NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan |
| Abstract: | We discuss the theory of the radio-frequency single-electron transistor and the measurements that use multiwalled carbon nanotubes as active elements. Our devices made of plasma-enhanced chemical-vapor-deposition nanotubes yield charge sensitivities of 10-20 μe/ $sqrt {Hz}$ . PACS numbers: 73.23.Hk, 73.63.Fg, 85.35.Gv, 85.35.Kt. |
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