Fabrication and characterization of Si quantum dots and SiO(2) tunnel barriers grown by a controlled oxidation process

The control of the growth of silicon dioxide (SiO(2)) and the formation of quantum dots (QDs) play an important role in the fabrication of single-electron transistors (SETs). In this work, SET?structures were fabricated using a systematic oxidation technique known as the pattern-dependent oxidation (PADOX) process. For comparison, two oxidation processes using conventional furnace and rapid thermal processing (RTP) were used. The oxidation temperature for both oxidation processes was set at 1000?°C and the oxygen flow rate in the furnace was set at 1?l?min(-1). The nanostructures were characterized using AFM, SEM and TEM to determine the quality and the stoichiometry of the Si QDs and the oxides. The oxidation rate using a furnace is 0.36?nm?s(-1), significantly lower than the RTP value which is 2.16?nm?s(-1). Meanwhile, the oxygen contents in SiO(2) grown by furnace and RTP are approximately the?same.