High-temperature dielectric and relaxation behavior of Yb-doped Bi0.5Na0.5TiO3 ceramics |
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| Affiliation: | 1. Key Laboratory of Nonferrous Materials and New Processing Technology, Ministry of Education, College of Materials Science and Engineering, Guangxi Universities Key Laboratory of Non-ferrous Metal Oxide Electronic Functional Materials and Devices, Guilin University of Technology, Guilin 541004, China;2. School of Physical Science & Technology and Guangxi Key Laboratory for Relativistic Astrophysics, Guangxi University, Nanning 530004, China;1. School of Advanced Materials Engineering, Changwon National University, Gyeongnam 641-773, Republic of Korea;2. Department of Materials Science and Engineering, Pohang University of Science and Technology, Gyeongbuk 790-784, Republic of Korea;1. Ferroelectric Materials Laboratory (LMF), LR Physics-Mathematics and Applications, University of Sfax, Faculty of Sciences of Sfax (FSS), Street Soukra km 3.5 BP 1171, 3000 Sfax, Tunisia;2. Laboratory of Physics of Condensed Matter (LPMC), University of Picardie Jules Verne, Scientific Pole, 33 rue Saint-Leu, 80039 Amiens Cedex 1, France;1. Key Laboratory of Advanced Civil Engineering Materials, Ministry of Education, School of Materials Science & Engineering, Tongji University, Shanghai 201804, China;2. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;1. Department of Physics and Material Science and Engineering, Jaypee Institute of Information Technology, Noida 201307, India;2. Electroceramics Group, Solid State Physics Laboratory, Timarpur, Delhi 110054, India |
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| Abstract: | Microstructure, phase transition and dielectric properties of Yb-doped Bi0.5Na0.5TiO3 (BNT) ceramics were investigated. It is found that ytterbium promotes the grain growth and densification of the ceramics while Ti-rich impurity appears due to the compensation of Ti-vacancy. The dielectric operational temperature range of the ceramics with a±15% tolerance was greatly broaden until 500 °C by ytterbium doping. Meanwhile, the diffuseness of the diffuse phase transition increases with the increase of doping Yb. BNT ceramics with 3 mol% Yb doping shows a near-plateau dielectric behavior in a broad temperature range from 147 to 528 °C and a low dielectric loss (<0.025) from 154 to 356 °C, indicating that it is a promising material for applications in high-temperature capacitor. |
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| Keywords: | BNT Dielectric Relaxor |
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