The effect of Sm2O3 on the microstructure and electrical properties of SiO2-doped SnO2-Zn2SnO4 ceramic varistors |
| |
| Affiliation: | 1. SSN Research Centre, SSN College of Engineering, Chennai 603 110, Tamilnadu, India;2. Research Institute and Department of Chemistry, SRM University, Kattankulathur 603 203, Tamilnadu, India;1. Superconductivity, Spintronics and Surface Science Center - C4S, Technical University of Cluj-Napoca, 28 Memorandumului Street, Cluj-Napoca, Romania;2. Imperial College London, Exhibition Road, South Kensington, London SW 7 2AZ, United Kingdom;3. Babeş-Bolyai University, Faculty of Chemistry and Chemical Engineering, Arany Janos 11, 400028 Cluj-Napoca, Romania;1. School of Materials Science and Technology, Xi’an University of Technology, Xi’an 710048, China;2. College of Chemistry & Chemical Engineering, Shaanxi University of Science & Technology, Xi’an 710021, China;3. Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0020, Japan;1. Institute of Metallurgy and Materials Science, Polish Academy of Sciences, 25 Reymonta st., 30-059 Kraków, Poland;2. Institute of Advanced Manufacturing Technology, 37a Wrocławska st., 30-011 Kraków, Poland;3. Warsaw University of Technology, 141 Wołoska st., 02-507 Warszawa, Poland |
| |
| Abstract: | ![]()
In this work, Sm2O3- and SiO2-codoped SnO2-Zn2SnO4 ceramic varistors were prepared through traditional ceramic processing, and the effect of Sm2O3 on the resulting microstructure and electrical properties was investigated. The results demonstrated that the ceramics were composed mainly of SnO2 and Zn2SnO4, and Sm was distributed homogeneously in the grains and along the grain boundaries. With 0.2 mol% Sm2O3 doping, the grain growth was obviously promoted. Further increases in Sm2O3 to 0.4 mol% resulted in trace amount of SiO2 and segregations containing elemental Sm via X-ray diffraction patterns and microstructure photos, respectively. In the sample doped with 0.3 mol% Sm2O3, optimal electrical characteristics of α=9.4, EB=10 V/mm, JL=46 μA/cm2 and ε′=1.2×104 were obtained. Simultaneously, the sample doped with 0.3 mol% Sm2O3 had the lowest conductance activation energy of 0.16 eV at temperatures lower than 110 °C. This good performance indicates that Sm2O3- and SiO2-codoped SnO2-Zn2SnO4 composite ceramics are viable candidate for the manufacture of capacitor-varistor functional devices. |
| |
| Keywords: | Varistors Electroceramics Dielectric properties |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
