| 湿法氧化Al0.85Ga0.15As时SiO2层的保护作用 |
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| 引用本文： | 周文飞,叶小玲,徐波,张世著,王占国.湿法氧化Al0.85Ga0.15As时SiO2层的保护作用[J].半导体学报,2012,33(10):102002-5. |
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| 作者姓名： | 周文飞 叶小玲 徐波 张世著 王占国 |
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| 作者单位： | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Department of Physics, Tsinghua University, Beijing 100084, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| 基金项目： | 国家自然科学基金项目（面上项目，重点项目，重大项目） |
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| 摘 要： | 本文研究了有无氧化硅保护层时Al0.85Ga0.15As层的高温湿法氧化。实验结果表明：氧化硅层对Al0.85Ga0.15As层的高温侧向湿法氧化速率基本无影响；被氧化区域SEM图像的衬度和有氧化硅保护层样品As拉曼峰的缺乏归因于被氧化区域中不存在氧化反应产物As，这有利于提高氧化层的热稳定性；有SiO2保护层样品的发光强度比无SiO2保护层样品的发光强度强的多，且具有SiO2保护层样品的发光峰位和半高全宽与氧化前的样品基本一致，而无SiO2保护层样品的发光峰位红移，半高宽展宽，这是由于氧化硅层阻止了GaAs盖层的氧化。
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| 关 键 词： | SiO2层 湿式氧化 保护作用 GaAs SEM图像 周围环境 氧化速率 去除作用 |
Protection effect of a SiO2 layer in Al0.85Ga0.15As wet oxidation |
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| Zhou Wenfei,Ye Xiaoling,Xu Bo,Zhang Shizhu and Wang Zhanguo.Protection effect of a SiO2 layer in Al0.85Ga0.15As wet oxidation[J].Chinese Journal of Semiconductors,2012,33(10):102002-5. |
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| Authors: | Zhou Wenfei Ye Xiaoling Xu Bo Zhang Shizhu and Wang Zhanguo |
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| Affiliation: | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Department of Physics, Tsinghua University, Beijing 100084, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | The Al0.85Ga0.15As layers buried below the GaAs core layer with and without the SiO2 layer were successfully oxidized in a wet ambient environment. The experimental results show that the SiO2 layer has little impact on the lateral-wet-oxidation rate of the Al0.85Ga0.15As layer. The contrast of the SEM image of the oxidized regions and the absence of As-related Raman peaks for samples with the SiO2 layer arise from the removal of As ingredients with the largest atomic number, which leads to improvements in the thermal stability of the oxidized layer. The PL intensities of samples with the SiO2 layer are much stronger than those without the SiO2 layer. The PL emission peak is almost unshifted with a slight broadening under the protection of the SiO2 layer. This is attributed to the SiO2 layer preventing oxidation damage to the GaAs capping layer. |
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| Keywords: | lateral wet oxidation SiO2 protection layer InAs QDs |
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