Effects of substrate temperature on the structural and electrical properties of Cu(In,Ga)Se2 thin films

Polycrystalline Cu(In,Ga)Se₂ (CIGS) thin films were deposited onto soda-lime glass substrates using the three-stage process at the substrate temperature (T_sub) varying from 350 to 550 °C. The effect of T_sub on the structural and electrical properties of CIGS films has been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and Hall effect measurement. We found that the surface roughness, constituent phases, film morphologies, resistivity (ρ) and carrier concentration (N_P) of as-grown CIGS films indicated different change trends with increase in T_sub. The higher T_sub gives smooth surface, large grain size and single-phase CIGS films. The values of N_P and ρ have two demarcated regions at T_sub of 380 and 450 °C. At lower T_sub of 380 °C, larger N_P and lower ρ were dominated by the existence of secondary-phase Cu_xSe with lower resistivity. In the case of 450 °C, the obvious changes in N_P and ρ can be attributed to the sufficient Na incorporation diffused from the glass substrate. Finally, the correlation of cell parameters with T_sub was analyzed.