| TiO_2掺杂对低压ZnO压敏电阻性能的影响 |
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| 引用本文： | 张丛春,周东祥,龚树萍. TiO_2掺杂对低压ZnO压敏电阻性能的影响[J]. 压电与声光, 2001, 0(3) |
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| 作者姓名： | 张丛春 周东祥 龚树萍 |
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| 作者单位： | 华中科技大学电子科学与技术系!武汉430074 |
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| 摘 要： | 研究了 Ti O2 掺杂量及制备工艺对 Zn O压敏电阻性能的影响。Ti O2 掺杂超过一定量时 ,压敏场强就不再降低 ,而非线性系数却一直下降 ,漏流迅速增大 ,使性能劣化。因此 ,要控制 Ti O2 掺杂量在适当范围内。粉料煅烧温度和烧成温度的高低也直接影响 Zn O压敏电阻性能。
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| 关 键 词： | ZnO 压敏陶瓷 TiO2 电性能 |
The Effects of TiO_2 Content and Process on the Electrical Properties in TiO_2-doped ZnO Varistors |
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| ZHANG Cong chun,ZHOU Dong xiang,GONG Shu ping. The Effects of TiO_2 Content and Process on the Electrical Properties in TiO_2-doped ZnO Varistors[J]. Piezoelectrics & Acoustooptics, 2001, 0(3) |
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| Authors: | ZHANG Cong chun ZHOU Dong xiang GONG Shu ping |
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| Abstract: | The effects of content of TiO 2 dopant and process on the microstructure and electrical properties were studied.TiO 2 dopant can drastically decrease the breakdown field of the ZnO varistor,but then has little effect on the breakdown field when it surpass 0 3%.Furthmore,the electrical property of ZnO varistor was adjusted by pre firing temperature and sintering temperature. |
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| Keywords: | ZnO varistor grain boundary TiO 2 electrical property |
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