Very low voltage, normally-off asymmetric Fabry-Perot reflection modulator |
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| Authors: | Whitehead M. Rivers A. Parry G. Roberts J.S. |
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| Affiliation: | Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK; |
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| Abstract: | ![]()
Using the electro-absorptive properties of approximately=150 AA quantum wells in an asymmetric Fabry-Perot modulator (AFPM), a normally-off reflection modulator with very low drive voltage was demonstrated. With this device contrasts of more than 6 Db at normal incidence in reflection have been achieved, with a voltage swing of only 3.5 V and > |
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