Low-Loss Two-Dimensional GaAs Epitaxial Waveguides at 10.6-/spl mu/m Wavelength

The successful fabrication of low-loss two-dimensional GaAs epitaxial waveguides by chemical etching for use in integrated optics at 10.6 /spl mu/m is reported. Selective excitation of specific E/sub pq//sup y/ modes was observed by placing the prism at specific angles in the horizontal plane. Loss measurements showed no increase in attenuationfor lower order E/sub pq//sup y/ modes (as compared to corresponding one-dimensional waveguide modes) when the guide width is 50 /spl mu/m. As the guide width is reduced, there is a significant increase in attenuation as p increases.