Effect of electron beam irradiation on the electrical and optical properties of ITO/Ag/ITO and IZO/Ag/IZO films |
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| Authors: | C.H. HongY.J. Jo H.A. KimI.-H. Lee J.S. Kwak |
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| Affiliation: | a Department of Printed Electronics Engineering (WCU), Sunchon National University, Jeonnam 540-742, Koreab Division of Advanced Materials Engineering, Chonbuk National University, Chonju 561-756, Korea |
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| Abstract: | We have investigated the effect of electron beam irradiation as well as insertion of a Ag layer on the electrical and optical properties of the ITO or IZO films. The results show that electron beam irradiation as well as inserting a very thin Ag layer can significantly reduce sheet resistance of the ITO/Ag/ITO and IZO/Ag/IZO films. The electron beam irradiation also increases light transmittance and optical band gap of the ITO/Ag/ITO multilayer films; meanwhile, it has not influence on the transmittance of the IZO/Ag/IZO films. These results can be explained by that In and Zn cation in IZO film have strong tendency to preserve their coordination with oxygen. |
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| Keywords: | Electron beam TCO |
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