| 射频微波晶体管的发展现状及分析 |
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| 引用本文： | 南敬昌,黎淑兰,刘元安,唐碧华. 射频微波晶体管的发展现状及分析[J]. 半导体技术, 2006, 31(12): 887-891 |
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| 作者姓名： | 南敬昌 黎淑兰 刘元安 唐碧华 |
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| 作者单位： | 北京邮电大学电信工程学院,北京,100876;辽宁工程技术大学,电子与信息工程系,辽宁,葫芦岛,125105;北京邮电大学电子工程学院,北京,100876;北京邮电大学电信工程学院,北京,100876 |
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| 摘 要： | 对当前各种类型射频微波晶体管的结构特点、性能和应用情况进行了分析和综述.对晶体管的发展历史进行了全面而细致的回顾,指明了今后射频微波晶体管的发展特点和发展趋势,得出了射频微波晶体管的选型原则.
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| 关 键 词： | 射频微波 晶体管 高电子迁移率晶体管 |
| 文章编号： | 1003-353X(2006)12-0887-05 |
| 收稿时间： | 2006-05-26 |
| 修稿时间： | 2006-05-26 |
Developing Status and Analysis of RF/Microwave Transistors |
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| NAN Jing-chang,LI Shu-lan,LIU Yuan-an,TANG Bi-hua. Developing Status and Analysis of RF/Microwave Transistors[J]. Semiconductor Technology, 2006, 31(12): 887-891 |
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| Authors: | NAN Jing-chang LI Shu-lan LIU Yuan-an TANG Bi-hua |
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| Affiliation: | 1.School of Telecommunication Engineering,2.School of Electronics Engineering, Beijing University of Posts and Telecommunications, Beijing 100876,China; 3. Department of Electronic and Information Engineering, Liaoning Technical University, Liaoning Huludao 125105,China |
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| Abstract: | The structural characteristics, performance and application of all kinds of RF/ microwave transistors were analyzed and summarized. The development of transistors was reviewed, and the developing characteristic and trend of RF/microwave transistors henceforth were designated. The rule of choosing RF/microwave transistors was given. |
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| Keywords: | RF microwave FET HEMT |
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