Testing semiconductor devices at extremely high operating temperatures |
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| Authors: | Peter Borthen Gerhard Wachutka |
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| Affiliation: | 1. Laboratory of Thin Film and Surface Physics, Department of Physics, Alzahra University, Tehran 19938, Iran;2. Department of Mechanic, Roudehen Branch, Islamic Azad University, Roudehen, Iran;1. School of Electronic and Electrical Engineering, Wuhan Polytechnic University, Wuhan, Hubei 430023, China;2. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China;1. National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 & 216, Puebla, Z. P. 72840 Puebla, Mexico;2. Universidad Autónoma de Tlaxcala, Av. Universidad No. 1, Z. P. 90006 Tlaxcala, Mexico;3. Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, Z. P. 32310 Chihuahua, Mexico |
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| Abstract: | We developed a dedicated measurement set-up for the electrical and electrothermal characterization of semiconductor devices and microsystems under very high-temperature conditions. The set-up consists of several modules comprising a vacuum system as basic unit and a number of alternative sample stages. Currently it enables measurements in the temperature range between room temperature and about 700 °C. We give a detailed description of the measurement system, sample mounting techniques, and exemplary measurements on SiC devices. |
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