Thermally Phase‐Transformed In2Se3 Nanowires for Highly Sensitive Photodetectors

The photoresponse characteristics of In₂Se₃ nanowire photodetectors with the κ‐phase and α‐phase structures are investigated. The as‐grown κ‐phase In₂Se₃ nanowires by the vapor‐liquid‐solid technique are phase‐transformed to the α‐phase nanowires by thermal annealing. The photoresponse performances of the κ‐phase and α‐phase In₂Se₃ nanowire photodetectors are characterized over a wide range of wavelengths (300–900 nm). The phase of the nanowires is analyzed using a high‐resolution transmission microscopy equipped with energy dispersive X‐ray spectroscopy and X‐ray diffraction. The electrical conductivity and photoresponse characteristics are significantly enhanced in the α‐phase due to smaller bandgap structure compared to the κ‐phase nanowires. The spectral responsivities of the α‐phase devices are 200 times larger than those of the κ‐phase devices. The superior performance of the thermally phase‐transformed In₂Se₃ nanowire devices offers an avenue to develop highly sensitive photodetector applications.