| 微纳级双极晶体管的热耗散研究 |
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| 引用本文： | 侯志刚,李惠军,许新新.微纳级双极晶体管的热耗散研究[J].微纳电子技术,2006,43(10):461-463,475. |
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| 作者姓名： | 侯志刚 李惠军 许新新 |
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| 作者单位： | 山东大学,孟堯微电子研发中心,济南,250100 |
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| 摘 要： | 对于双极性晶体管,由于自身存在的自加热现象,严重地影响着器件的特性。基于热电流方程、泊松方程及电流密度方程,在二维器件仿真环境下,进行了微纳级小尺寸npn双极性晶体管热现象的器件物理特性分析。重点研究了器件的集电极电流IC与晶格温度T的因变关系。研究结果显示,随着IC的增加,器件的晶格温度逐渐升高,VCE保持在3.0V、VBE达到最大值0.735V时,随器件晶格温度的升高VBE将减小。最后,笔者给出了描述晶体管温变关系的三维曲线。
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| 关 键 词： | 超深亚微米 微纳级 双极性器件 热现象 集成电路 |
| 文章编号： | 1671-4776（2006）10-0461-03 |
| 收稿时间： | 2006-07-17 |
| 修稿时间： | 2006-07-17 |
Hot Dissipation Research of Micronano Level BJT |
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| HOU Zhi-gang,LI Hui-jun,XU Xin-xin.Hot Dissipation Research of Micronano Level BJT[J].Micronanoelectronic Technology,2006,43(10):461-463,475. |
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| Authors: | HOU Zhi-gang LI Hui-jun XU Xin-xin |
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| Affiliation: | Mengyao Microelectronics Research and Development Center, Shandong University, Jinan 250100, China |
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| Abstract: | Bipolar junction transistor(BJT)has the self-heating phenomena,which seriously affects the properties of transistor.Based on the thermal flow equation,Poisson's equation and current density equation,the thermal phenomena of Micronano level small-dimension BJTs was analyzed using the 2-D simulated software.A plot of IC vs.T is given.The simulation results show that the temperature will increase as the collector current increases.While holding the collector-emitter voltage constant at 3.0 V,the base-emitter voltage reaches maximum value about 0.735 V and then starts to decrease.Finally,the 3-D temperature distribution of BJT was plotted. |
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| Keywords: | VDSM(very deep submicrometer) micronano level bipolar transistor hot phenomena IC |
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