| TiN／Ti／SiO2／Si基板的分电极酸性化学镀铜 |
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| 引用本文： | 温锦生,刘超,钟声,杨志刚.TiN／Ti／SiO2／Si基板的分电极酸性化学镀铜[J].稀有金属材料与工程,2006,35(2):324-328. |
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| 作者姓名： | 温锦生 刘超 钟声 杨志刚 |
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| 作者单位： | 清华大学,北京,100084 |
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| 摘 要： | 讨论了对TiNi／Ti／SiO2／Si基板在HF＋CuSO4中采用分离双电极方法的化学酸性镀铜。Si基板和TiNUTi／SiO2／Si基板分别作为化学镀的阳极和阴极，在开路条件下进行化学镀。最佳化学镀反应条件为电极相距0．5mm，HF]和CuSO4]大于8％（质量分数）和0．045mol／L。最后得到覆盖率高、晶粒大小均一、结构致密、具有〈111〉择优取向的Cu膜，且Cu膜中不含Cu2O，降低了电阻率。
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| 关 键 词： | 分电极酸性化学镀 Cu基板 TiN/Ti/SiO2/Si基板 集成电路 |
| 文章编号： | 1002-185X(2006)02-0324-05 |
| 收稿时间： | 2004-11-01 |
| 修稿时间： | 2004年11月1日 |
Electroless Acid-Based Plating Cu on TiNi/Ti/SiO2/Si Substrate |
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| Wen Jinsheng,Liu Chao,Zhong Sheng,Yang Zhigang.Electroless Acid-Based Plating Cu on TiNi/Ti/SiO2/Si Substrate[J].Rare Metal Materials and Engineering,2006,35(2):324-328. |
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| Authors: | Wen Jinsheng Liu Chao Zhong Sheng Yang Zhigang |
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| Affiliation: | Department of Material Science and Engineering, Tsinghua University, Beijing 100084, China |
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| Abstract: | Plating Cu on TiNi/Ti/SiO2/Si substrate in the HF+CuSO4 solution by separated electrodes chemical method was discussed in this essay. Si and TiNi/Ti/SiO2/Si are used as the anode and cathode. The best condition for the plating is as followings: distance for the electrodes is 0.5 mm, HF] and CuSO4] more than 8 wt% and 0.045 mol/L. Finally uniform deposited Cu film with complete coverage, few voids and preference of <111> is obtained. Also deposited Cu film does not contain Cu2O, which reduces the resistivity. |
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| Keywords: | acid-based chemical plating Cu substrate TiNi/Ti/SiO2/Si substrate IC |
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