Improved Electromechanical Response in Rhombohedral BaTiO3 |
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Authors: | Y Avrahami H L Tuller |
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Affiliation: | (1) Department of Materials Science and Engineering, Crystal Physics and Electroceramics Laboratory, MIT, Cambridge, MA 02139, USA |
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Abstract: | Zr-, Hf-, and KNb-doped BaTiO3 materials were prepared in a composition range that stabilizes the rhombohedral phase above room temperature. These materials were prepared as bulk polycrystalline material using standard solid-state reaction methods. X-ray diffraction was used to confirm the existence of a stable rhombohedral phase while dielectric constant measurements confirmed the expected phase transition temperatures. A piezoelectric coefficient of d33 = 290–470 pC/N was obtained for Zr- and Hf-doped BaTiO3, compared with d33 = 75 pC/N for pure BaTiO3. An electrostrictive coefficient of Q33 = 0.37 m4/C2 was obtained for the KNb-doped material, compared with Q33 = 0.11 m4/C2 for pure BaTiO3. The maximum strain measured for the doped samples was 5–10 times higher than that of pure BaTiO3. |
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Keywords: | piezoelectric barium-titanate dielectric high strain |
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