Neutron-transmutation-doped germanium bolometers |
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| Authors: | N. P. Palaio M. Rodder E. E. Haller E. Kreysa |
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| Affiliation: | 1. Department of Materials Science and Mineral Engineering and Lawrence Berkeley Laboratory, University of California, 94720, Berkeley, California, USA
2. Max-Planck Institute for Radioastronomy, Bonn, FRG
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| Abstract: | Six slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5×1016 and 1.88×1018 cm?2. After thermal annealing the resistivity was measured down to low temperatures (<4.2K) and found to follow the relationship ρ = ρ0exp(Δ/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers. |
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