| 磁控溅射法制备复合绝缘层的薄膜晶体管 |
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| 引用本文： | 白钰. 磁控溅射法制备复合绝缘层的薄膜晶体管[J]. 半导体光电, 2010, 31(4) |
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| 作者姓名： | 白钰 |
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| 作者单位： | 五邑大学,数理系,功能材料研究所,广东,江门,529020 |
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| 摘 要： | 研究了磁控溅射法制备的复合绝缘层结构的有机薄膜晶体管.该器件是以酞菁铜(CuPc)作为有源层,SiO2/Si3N4/SiO2复合绝缘层和单层SiO2为绝缘层来进行对比研究的.结果显示与单层SiO2绝缘层的器件相比,具有复合绝缘层的器件结构能有效改进有机薄膜晶体管的性能.同时发现,不同厚度的SiO2/Si3N4/SiO2复合绝缘层对晶体管的性能也有影响,绝缘层太厚,感应电流小;绝缘层太薄,器件容易被击穿.
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| 关 键 词： | 磁控溅射 复合绝缘层 晶体管 |
Thin Film Transistors with Magnetron Spattering Compound Insulators |
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| BAI Yu. Thin Film Transistors with Magnetron Spattering Compound Insulators[J]. Semiconductor Optoelectronics, 2010, 31(4) |
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| Authors: | BAI Yu |
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| Affiliation: | BAI Yu(Institute of Functional Materials,Department of Mathematics &Physics,Wuyi University,Jiangmen 529020,CHN) |
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| Abstract: | An organic thin-film transistor(OTFT)with the configuration of compound gate insulator fabricated by magnetron spattering is investigated.Copper phthalocyanine(CuPc)is used as the active layer in OTFT devices.A comparison between using SiO2as the single insulator and SiO2/Si3N4/SiO2as the compound insulator is carried out.The results indicate that using SiO2/Si3N4/SiO2insulator is an effective way to improve OTFT performance,and different thickness of SiO2/Si3N4/SiO2compound insulator also has effect on the... |
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| Keywords: | magnetron spattering compound insulator transistor |
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