| 纳米ZnO薄膜的热蒸发法制备及其光电特性研究 |
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| 引用本文： | 楼曹鑫,马锡英,黄仕华,王丽伟.纳米ZnO薄膜的热蒸发法制备及其光电特性研究[J].半导体光电,2010,31(5). |
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| 作者姓名： | 楼曹鑫 马锡英 黄仕华 王丽伟 |
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| 作者单位： | 浙江师范大学数理信息学院,浙江金华,321004;绍兴文理学院光电材料研究所,浙江绍兴,312000;绍兴文理学院光电材料研究所,浙江绍兴,312000;浙江师范大学数理信息学院,浙江金华,321004 |
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| 摘 要： | 以醋酸锌为原料、O/Ar的混合气体为携载气体,在500℃的温度下应用热蒸发法在p型Si基片上生长纳米ZnO薄膜,并研究了其形貌、结构和光电特性.X-射线(XRD)衍射结果显示所制备ZnO纳米晶体呈六角纤锌矿结构;扫描电子显微镜(SEM)观察发现生长的Zn0薄膜平整均匀,纳米晶体颗粒平均尺寸为25nm.应用紫外-可见光吸收谱分析了其吸收特性,发现该ZnO薄膜在紫外波段具有很强的吸收,其吸收边位于320nm处.由于量子限制效应,与体材料相比,该吸收边存在明显的蓝移.应用光致发光谱(PL)研究了其发光特性,发现该ZnO薄膜在近紫外以及蓝-绿光波段具有强烈的受激发射.最后,还研究了ZnO薄膜的电容-电压(C-V)特性.
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| 关 键 词： | 热蒸发法 ZnO薄膜 光致发光 SEM |
Fabrication and Photoelectrical Properties of ZnO Thin Films Prepared by Thermal Evaporation Process |
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| LOU Caoxin,MA Xiying,HUANG Shihua,WANG Liwei.Fabrication and Photoelectrical Properties of ZnO Thin Films Prepared by Thermal Evaporation Process[J].Semiconductor Optoelectronics,2010,31(5). |
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| Authors: | LOU Caoxin MA Xiying HUANG Shihua WANG Liwei |
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| Affiliation: | LOU Caoxin1,2,MA Xiying2,HUANG Shihua1,WANG Liwei 1 (1.School of Mathematics and Physics,Zhejiang Normal University,Jinhua 321004,CHN,2.Institute of Photoelectrical Materials,Shaoxing University,Shaoxing 312000,CHN) |
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| Abstract: | ZnO nanocrystals thin films were prepared on Si substrate by thermal evaporation process at 500oC temperature,using zinc acetate dihydrate as the source materials and O/Ar mixture as the carrying gas.The morphology,structure,and the photoelectrical properties of the as grown ZnO thin film are studied.The results of X-ray Diffraction(XRD)shows that ZnO nanocrystals are characterized by the wurtzite structure.Observations by a Scanning Electron Microscopy(SEM)show that the ZnO nanocrystals thin film is flat a... |
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| Keywords: | SEM |
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