Damage creation in ion irradiated Si1−xGex/Si structures |
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| Authors: | Michael Martin Jesse Carter Mark Hollander |
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| Affiliation: | a Department of Nuclear Engineering, Texas A&M University, 129 Zachry, 3133 TAMU, College Station, TX 77843, USA
b Code 6812, Naval Research Laboratory, Washington, DC 20375-5347, USA |
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| Abstract: | Strained SiGe/Si structures have been proposed as substrates for fabrication of high speed metal oxide semiconductor transistors. However, influence of strain and/or presence of Ge atoms on damage creation during ion irradiation have not been explored to a significant extent. In this study, Rutherford backscattering spectrometry (RBS) was used to characterize Si1−xGex/Si structures irradiated by 140 keV He+ ions at room temperature. When compared with pure Si, strained samples show enhanced damage accumulation as a function of He fluence. Channeling angular scans did not reveal any specific configuration of displacements. Possible mechanisms for enhanced damage in strained Si are discussed. |
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| Keywords: | 61.43.Dq 61.72.Cc 61.72.uf |
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